MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFH50N50P3	1+ $7.850 10+ $7.100 25+ $6.770 100+ $5.880		PDF RFQ	192 In-stock	IXYS	MOSFET N-Channel: Power MOSFET w/Fast Diode	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	50 A	120 mOhms	5 V	85 nC	Enhancement	Polar3, HiperFET
	IXTQ36N50P	1+ $6.570 10+ $5.940 25+ $5.660 100+ $4.920		PDF RFQ	132 In-stock	IXYS	MOSFET 36.0 Amps 500 V 0.17 Ohm Rds	30 V	Through Hole	TO-3P-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	36 A	170 mOhms	5 V	85 nC	Enhancement	PolarHV
	IXTT36N50P	1+ $8.660 10+ $7.830 25+ $7.470 100+ $6.480		PDF RFQ	55 In-stock	IXYS	MOSFET 36.0 Amps 500 V 0.17 Ohm Rds	30 V	SMD/SMT	TO-268-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	36 A	170 mOhms	5 V	85 nC	Enhancement	PolarHV
	IXTH36N50P	1+ $6.930 10+ $6.260 25+ $5.970 100+ $5.180		PDF RFQ	58 In-stock	IXYS	MOSFET 36.0 Amps 500 V 0.17 Ohm Rds	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	500 V	36 A	170 mOhms	5 V	85 nC	Enhancement	PolarHV

IXFH50N50P3

IXFH50N50P3

IXYS

MOSFET N-Channel: Power MOSFET w/Fast Diode

Stock : 192

1+: $7.850

10+: $7.100

25+: $6.770

100+: $5.880

IXTQ36N50P

IXTQ36N50P

IXYS

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

Stock : 132

1+: $6.570

10+: $5.940

25+: $5.660

100+: $4.920

IXTT36N50P

IXTT36N50P

IXYS

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

Stock : 55

1+: $8.660

10+: $7.830

25+: $7.470

100+: $6.480

IXTH36N50P

IXTH36N50P

IXYS

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

Stock : 58

1+: $6.930

10+: $6.260

25+: $5.970

100+: $5.180

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