- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
- Channel Mode :
- Tradename :
37 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,645
In-stock
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IXYS | MOSFET 0.2 A 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||||
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114
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | ||||
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206
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | 23.7 nC | ||||||
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155
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | 96 nC | ||||||
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238
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | - | - | Depletion | ||||
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250
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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334
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | ||||||
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86
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | |||
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86
In-stock
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IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 300 mOhms | - 2 V | 199 nC | Depletion | ||||
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140
In-stock
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IXYS | MOSFET N-CH MOSFETS 500V 800MA | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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VIEW | IXYS | MOSFET 43 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 34 Amps 500V 0.12 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 34 A | 154 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 32A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 150 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 48 Amps 500V 0.08 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 500V 0.055 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 72 A | 55 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 41 Amps 500V 110 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 41 A | 110 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 52 Amps 500V 0.08 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 47 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-264-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 90 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.15 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 41 Amps 500V 0.11 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 41 A | 110 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET |
