- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (4)
- 120 mOhms (2)
- 140 mOhms (2)
- 150 mOhms (2)
- 154 mOhms (1)
- 160 mOhms (7)
- 165 mOhms (1)
- 170 mOhms (4)
- 190 mOhms (1)
- 200 mOhms (8)
- 230 mOhms (6)
- 240 mOhms (2)
- 250 mOhms (3)
- 270 mOhms (3)
- 3.5 Ohms (1)
- 300 mOhms (1)
- 400 mOhms (1)
- 65 mOhms (1)
- 72 mOhms (1)
- 80 mOhms (1)
- 85 mOhms (1)
- 90 mOhms (1)
- 95 mOhms (1)
- Qg - Gate Charge :
55 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,492
In-stock
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IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | |||||
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511
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||
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484
In-stock
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IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
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850
In-stock
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IXYS | MOSFET 500V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
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180
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | |||||
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507
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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192
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 120 mOhms | 5 V | 85 nC | Enhancement | Polar3, HiperFET | |||
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450
In-stock
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IXYS | MOSFET 500V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | Enhancement | HyperFET | |||||
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72
In-stock
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IXYS | MOSFET 500V 80A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 72 mOhms | Enhancement | HyperFET | |||||
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67
In-stock
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IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET 62 Amps 500V 0.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 62 A | 100 mOhms | Enhancement | ||||||
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79
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | 5 V | 42 nC | Enhancement | Polar3, HiperFET | |||
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150
In-stock
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IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | |||
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60
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 150 mOhms | Enhancement | HyperFET | |||||
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110
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 190 mOhms | Enhancement | HyperFET | |||||
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58
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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27
In-stock
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IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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53
In-stock
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IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
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60
In-stock
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IXYS | MOSFET 500V 64A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 35 A | 95 mOhms | Enhancement | HyperFET | |||||
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9
In-stock
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IXYS | MOSFET HIGH VOLT PWR MOSFET 1500V 6A | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 6 A | 3.5 Ohms | 5 V | 67 nC | Enhancement | ||||||
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10
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | |||
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27
In-stock
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IXYS | MOSFET 500V 55A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 55 A | 80 mOhms | Enhancement | HyperFET | |||||
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52
In-stock
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IXYS | MOSFET 500V 40A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 140 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
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VIEW | IXYS | MOSFET 43 Amps 500V 0.1 Rds | 20 V | SMD/SMT | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 43 A | 100 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET DIODE Id26 BVdass500 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 26A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 48 Amps 500V 0.1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 48 A | 100 mOhms | Enhancement | HyperFET |
