- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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50
In-stock
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IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 125 mOhms | HyperFET | |||||||||
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30
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 20 A | 300 mOhms | 3 V to 5 V | 36 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-3P-3 | Tube | Si | N-Channel | 500 V | 34 A | 180 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET |
