- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
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19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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283
In-stock
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IXYS | MOSFET 500V 12A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar, HiPerFET | |||
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155
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 6A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 550 mOhms | 96 nC | ||||||
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250
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 800 mA | 4.6 Ohms | 12.7 nC | ||||||
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192
In-stock
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IXYS | MOSFET 500V 16A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||||
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334
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 3A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3 A | 1.5 Ohms | 40 nC | ||||||
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149
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | ||||||
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86
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 480 mOhms | 2.5 V | 123 nC | Enhancement | LinearL2 | |||
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75
In-stock
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IXYS | MOSFET 8 Amps 500V 0.8 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | Enhancement | ||||||
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157
In-stock
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IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
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52
In-stock
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IXYS | MOSFET 12.0 Amps 500 V 0.5 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar | |||
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100
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 500V 1.6A | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 1.6 A | 2.3 Ohms | ||||||||||
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36
In-stock
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IXYS | MOSFET 6 Amps 500V 1.1 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 6 A | 1.1 Ohms | 5 V | 14.6 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 16 A | 360 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFET Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 20 A | 300 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 240 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | |||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 8 A | 800 mOhms | HyperFET | ||||||||||
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VIEW | IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 500 V | 5 A | 1.65 Ohms | HyperFET |
