- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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37
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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30
In-stock
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IXYS | MOSFET 24 Amps 1000V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 400 mOhms | 5.5 V | 267 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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10
In-stock
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IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 1KV 24A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET |
