- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,288
In-stock
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IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | ||||
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181
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | - 4.5 V | 46 nC | Enhancement | TrenchP | |||
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355
In-stock
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IXYS | MOSFET 32 Amps 50V 0.036 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | Enhancement | ||||||
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GET PRICE |
28
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 50 V | - 32 A | 39 mOhms | |||||||||||
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GET PRICE |
4
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 2 V to - 4 V | 196 nC | |||||||
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GET PRICE |
2,240
In-stock
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IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | ||||||||||
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GET PRICE |
900
In-stock
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IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP | ||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET -32 Amps -600V 0.350 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 32 A | 350 mOhms | - 4 V | 196 nC | Enhancement | PolarP |