- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
36
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.500 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 4.5 V | 39 nC | Enhancement | ||||
|
|
310
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.50 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 5 V | 39 nC | Enhancement | HyperFET | |||
|
|
100
In-stock
|
IXYS | MOSFET 3 Amps 1000V 4.8 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3 A | 4.8 Ohms | 4.8 V | 39 nC | Enhancement | Polar |
