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- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
3,499
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | |||||
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GET PRICE |
269
In-stock
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IXYS | MOSFET MOSFET Id3 BVdass1200 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 3 A | 4.5 Ohms | Enhancement | |||||
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GET PRICE |
138
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.5 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | Enhancement | HyperFET | ||||
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GET PRICE |
36
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.500 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 4.5 V | 39 nC | Enhancement | |||
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GET PRICE |
310
In-stock
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IXYS | MOSFET 3 Amps 1200V 4.50 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 5 V | 39 nC | Enhancement | HyperFET |
