Build a global manufacturer and supplier trusted trading platform.
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXTT16P20
1+
$6.620
10+
$5.980
25+
$5.700
100+
$4.950
VIEW
RFQ
IXYS MOSFET -16 Amps -200V 0.16 Rds   SMD/SMT TO-268-3     Tube 1 Channel Si P-Channel - 200 V - 16 A 160 mOhms    
IXFT32N50Q
60+
$12.180
120+
$10.730
270+
$10.200
510+
$9.550
VIEW
RFQ
IXYS MOSFET 500V 32A 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 32 A 160 mOhms Enhancement HyperFET
IXFT30N40Q
30+
$11.570
120+
$10.190
270+
$9.690
510+
$9.070
VIEW
RFQ
IXYS MOSFET 30 Amps 400V 0.16 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 400 V 30 A 160 mOhms Enhancement HyperFET
IXFT30N50
30+
$10.720
120+
$9.440
270+
$8.980
510+
$8.400
VIEW
RFQ
IXYS MOSFET 30 Amps 500V 0.16 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 160 mOhms Enhancement HyperFET
IXFT30N50Q
30+
$10.720
120+
$9.440
270+
$8.980
510+
$8.400
VIEW
RFQ
IXYS MOSFET 30 Amps 500V 0.16 Rds 20 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 30 A 160 mOhms Enhancement  
Page 1 / 1