- Qg - Gate Charge :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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135
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
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49
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 200V 58A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 58 Amps 200V 0.08W Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 58 A | 40 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |
