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Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFB40N110P
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27
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IXYS MOSFET 40 Amps 1100V 0.2600 Rds 30 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 40 A 260 mOhms     Enhancement HyperFET
IXFB40N110Q3
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25
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IXYS MOSFET 30 V Through Hole PLUS-264-3 - 55 C + 150 C   1 Channel Si N-Channel 1.1 kV 40 A 260 mOhms 3.5 V 300 nC Enhancement HyperFET
IXTR40P50P
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30
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IXYS MOSFET -22.0 Amps -500V 0.260 Rds   Through Hole TO-247-3     Tube   Si P-Channel - 500 V - 22 A 260 mOhms        
IXFH28N60P3
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30
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IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 30 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 600 V 28 A 260 mOhms 5 V 50 nC   HyperFET
IXFQ28N60P3
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RFQ
43
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IXYS MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET 30 V Through Hole TO-3P-3     Tube 1 Channel Si N-Channel 600 V 28 A 260 mOhms 5 V 50 nC   HyperFET
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