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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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232
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS247 | |||
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19
In-stock
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IXYS | MOSFET 75 Amps 600V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 75 A | 30 mOhms | 3.9 V | 500 nC | Enhancement | CoolMOS | |||
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10
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Chassis Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 60 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS | |||
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17
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 60 mOhms | 3.9 V | 250 nC | Enhancement | HiPerFET, COOLMOS, ISOPLUS i4-PAC | |||
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25
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 41 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS i4-PAC | |||
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20
In-stock
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IXYS | MOSFET 45 Amps 800V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 63 mOhms | 3.9 V | 360 nC | Enhancement | CoolMOS |