- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,483
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
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171
In-stock
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IXYS | MOSFET -16.0 Amps -600V 0.720 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 16 A | 720 mOhms | - 4 V | 92 nC | Enhancement | PolarP | |||
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114
In-stock
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IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | ||||
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58
In-stock
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IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
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131
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | |||
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24
In-stock
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IXYS | MOSFET -108.0 Amps -100V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 108 A | 13 mOhms | - 4 V | 240 nC | Enhancement | PolarP | ||||
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37
In-stock
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IXYS | MOSFET -18 Amps -600V 0.385 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 18 A | 385 mOhms | - 4 V | 196 nC | Enhancement | PolarP | ||||
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2
In-stock
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IXYS | MOSFET -10.0 Amps -600V 0.790 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 10 A | 790 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||||
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9
In-stock
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IXYS | MOSFET -90.0 Amps -200V 0.048 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 200 V | - 53 A | 48 mOhms | - 4 V | 205 nC | Enhancement | PolarP | ||||
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90
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP |
