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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXTP14N60P
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79
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IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXTQ14N60P
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RFQ
66
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IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXTA14N60P
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40
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IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXFQ20N50P3
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30
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IXYS MOSFET Polar3 HiPerFET Power MOSFET 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube   Si N-Channel 500 V 20 A 300 mOhms 3 V to 5 V 36 nC Enhancement HyperFET
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