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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH140N10P
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RFQ
654
In-stock
IXYS MOSFET 140 Amps 100V 0.011 Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 140 A 11 mOhms 5 V 155 nC Enhancement PolarHV, HiPerFET
IXTN17N120L
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RFQ
9
In-stock
IXYS MOSFET 17 Amps 1200V 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 15 A 900 mOhms 6 V 155 nC Enhancement Linear
IXFT140N10P
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RFQ
30
In-stock
IXYS MOSFET 140 Amps 100V 0.011 Rds 20 V SMD/SMT TO-268-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 140 A 11 mOhms 5 V 155 nC Enhancement PolarHV, HiPerFET
IXTT140N10P
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RFQ
19
In-stock
IXYS MOSFET 140 Amps 100V 0.011 Rds 20 V SMD/SMT TO-268-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 140 A 11 mOhms 5 V 155 nC Enhancement PolarHT
IXTQ140N10P
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RFQ
IXYS MOSFET 140 Amps 100V 0.011 Rds 20 V Through Hole TO-3P-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 140 A 11 mOhms 5 V 155 nC Enhancement PolarHT
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