- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,288
In-stock
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IXYS | MOSFET TenchP Power MOSFET | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 32 A | 130 mOhms | - 4 V | 180 nC | Enhancement | ||||
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397
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
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289
In-stock
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IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 180 nC | Enhancement | ||||||
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255
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||||
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135
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
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85
In-stock
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IXYS | MOSFET Standard Linear Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 200 V | 80 A | 32 mOhms | 4 V | 180 nC | Enhancement | Linear | ||||
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261
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V | 180 nC | Enhancement | ||||
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75
In-stock
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IXYS | MOSFET Trench HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | |||
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84
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
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30
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
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50
In-stock
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IXYS | MOSFET 25 Amps 800V 0.15 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 150 mOhms | 4 V | 180 nC | Enhancement | CoolMOS, ISOPLUS | |||
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4
In-stock
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IXYS | MOSFET 75 Amps 100V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 125 C | Tube | Si | N-Channel | 100 V | 75 A | 25 mOhms | 4 V | 180 nC | HiPerFET, ISOPLUS i4-PAC | |||||
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1
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | |||
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9
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 86A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 86 A | 43 mOhms | 5 V | 180 nC | Enhancement | Trench, HiperFET | ||||
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30
In-stock
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IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88... | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | Polar, HiPerFET |
