- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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49
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 66 Amps 200V | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.03 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.022W Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.028W Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 66 Amps 200V 0.04 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 66 A | 40 mOhms | Enhancement | HyperFET |
