- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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190
In-stock
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IXYS | MOSFET 600V 14A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 550 mOhms | Enhancement | HyperFET | ||||||
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100
In-stock
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IXYS | MOSFET 600V 14A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 550 mOhms | Enhancement | HyperFET | ||||||
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100
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | HyperFET | ||||||||||
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30
In-stock
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IXYS | MOSFET Polar3 HiPerFETs Power MOSFETs | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | HyperFET | ||||||||||
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40
In-stock
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IXYS | MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 540 mOhms | 3 V to 5 V | 25 nC | Enhancement | HyperFET | ||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.72 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | ||||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.72 Rds | SMD/SMT | TO-268-3 | Tube | Si | N-Channel | 800 V | 14 A | 720 mOhms | HyperFET | |||||||||||
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VIEW | IXYS | MOSFET 600V 14A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 550 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.90 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 900 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 800V 0.7 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 700 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.75 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 750 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 750 mOhms | Enhancement | HyperFET |