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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFN180N15P
1+
$20.350
10+
$18.710
20+
$17.930
100+
$15.800
RFQ
234
In-stock
IXYS MOSFET 180 Amps 150V 0.011 Rds 20 V Chassis Mount SOT-227-4 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 150 A 11 mOhms Enhancement HyperFET
IXFK150N30P3
1+
$15.180
10+
$13.960
25+
$13.380
100+
$11.790
RFQ
129
In-stock
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode   Through Hole TO-264-3     Tube 1 Channel Si N-Channel 300 V 150 A 19 mOhms   HyperFET
IXFX150N30P3
1+
$15.010
10+
$13.810
25+
$13.230
100+
$11.660
RFQ
109
In-stock
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode   Through Hole TO-247-3     Tube 1 Channel Si N-Channel 300 V 150 A 19 mOhms   HyperFET
IXFK150N10
25+
$16.840
100+
$14.840
250+
$14.110
500+
$13.200
VIEW
RFQ
IXYS MOSFET 150 Amps 100V   Through Hole TO-264-3     Tube 1 Channel Si N-Channel 100 V 150 A 12 mOhms   HyperFET
IXFK150N15
25+
$15.380
100+
$13.550
250+
$12.880
500+
$12.050
VIEW
RFQ
IXYS MOSFET 150 Amps 150V 0.0125 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 150 V 150 A 12.5 mOhms Enhancement HyperFET
IXFX150N15
30+
$14.660
120+
$12.910
270+
$12.280
510+
$11.490
VIEW
RFQ
IXYS MOSFET 150 Amps 150V 0.0125 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 150 V 150 A 12.5 mOhms Enhancement HyperFET
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