- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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34
In-stock
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IXYS | MOSFET 600V 44A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | 4.5 V | 330 nC | Enhancement | HyperFET | |||
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27
In-stock
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IXYS | MOSFET 75 Amps 300V 0.033 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 75 A | 36 mOhms | 4.5 V | 360 nC | Enhancement | HyperFET | |||
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4
In-stock
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IXYS | MOSFET 600V 60A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 75 mOhms | 4.5 V | 380 nC | Enhancement | HyperFET | |||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET |
