- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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30
In-stock
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IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | Enhancement | HyperFET | ||||
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30
In-stock
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IXYS | MOSFET 14 Amps 800V 0.72 Rds | SMD/SMT | TO-268-3 | Tube | Si | N-Channel | 800 V | 14 A | 720 mOhms | HyperFET | |||||||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 20 Amps 800V 0.42 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 420 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 13 Amps 800V 0.8 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 700 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 15 Amps 800V 0.6 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 15 A | 600 mOhms | Enhancement | HyperFET |
