- Mounting Style :
- Rds On - Drain-Source Resistance :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
91
In-stock
|
IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | ||||||
|
40
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 125 mOhms | HyperFET | ||||||||||
|
51
In-stock
|
IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | ||||||
|
39
In-stock
|
IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | |||||||
|
110
In-stock
|
IXYS | MOSFET 500V 30A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | ||||||
|
48
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/30A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 62 nC | HyperFET | ||||||||
|
VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/44A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | 93 nC | HyperFET | ||||||||
|
VIEW | IXYS | MOSFET 500V 32A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 160 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 32 Amps 500V 0.15 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 32 A | 150 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 24 Amps 500V | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 26 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 200 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 30 Amps 500V 0.16 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 160 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 21 Amps 500V 0.25 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 250 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 13 Amps 500V 0.4 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 400 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET |