- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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276
In-stock
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IXYS | MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 132 A | 39 mOhms | 5 V | 250 nC | HyperFET | ||||||
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65
In-stock
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IXYS | MOSFET 600V 110A 0.056Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 110 A | 56 mOhms | 5 V | 245 nC | HyperFET | ||||||
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45
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 62 A | 140 mOhms | 270 nC | HyperFET | |||||||
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27
In-stock
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IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 40 A | 260 mOhms | Enhancement | HyperFET | |||||
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27
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 49 mOhms | 255 nC | HyperFET | |||||||
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25
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.1 kV | 40 A | 260 mOhms | 3.5 V | 300 nC | Enhancement | HyperFET | ||||
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29
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A | 30 V | Through Hole | PLUS-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 264 nC | HyperFET | ||||||
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7
In-stock
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IXYS | MOSFET 210 Amps 200V 0.0105 Rds | 20 V | Through Hole | PLUS-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 210 A | 10.5 mOhms | HyperFET | ||||||
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5
In-stock
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IXYS | MOSFET 38 Amps 1000V 0.25 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 280 mOhms | Enhancement | HyperFET | |||||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 75 mOhms | 275 nC | HyperFET | |||||||
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24
In-stock
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IXYS | MOSFET 80 Amps 500V 0.06 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 60 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 80 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 50 Amps 800V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 50 A | 150 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET POLAR PWR MOSFET 100V, 300A | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 300 A | 5.5 mOhms | HyperFET |
