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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX32N100P
1+
$16.340
10+
$15.020
25+
$14.400
100+
$12.690
RFQ
60
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 32 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IXFR26N120P
1+
$27.100
5+
$26.820
10+
$25.000
25+
$23.870
RFQ
28
In-stock
IXYS MOSFET 32 Amps 1200V 0.46 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1200 V 15 A 500 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IXFK32N100P
1+
$17.320
10+
$15.930
25+
$15.270
100+
$13.450
RFQ
3
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 32 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
IXFN32N100P
1+
$26.110
5+
$25.850
10+
$24.090
25+
$23.010
RFQ
30
In-stock
IXYS MOSFET 32 Amps 1000V 0.32 Rds 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 27 A 320 mOhms 6.5 V 225 nC Enhancement Polar, HiPerFET
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