- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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60
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||||
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28
In-stock
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IXYS | MOSFET 32 Amps 1200V 0.46 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 15 A | 500 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||||
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3
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | ||||
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30
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 27 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET |