- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26
In-stock
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IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
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8
In-stock
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IXYS | MOSFET 160A 300V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 300 V | 160 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | ||||
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120
In-stock
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IXYS | MOSFET 120V 300V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 120 A | 24 mOhms | 5 V | 265 nC | Enhancement | GigaMOS | |||
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VIEW | IXYS | MOSFET 140A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS |
