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468 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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45
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
10
In-stock
|
IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | |||
|
|
6,492
In-stock
|
IXYS | MOSFET HiPERFET Id26 BVdass500 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | Enhancement | HyperFET | |||||
|
|
479
In-stock
|
IXYS | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 6 A | 2.75 Ohms | 5 V | 92 nC | Enhancement | Polar, HiPerFET | ||||
|
|
511
In-stock
|
IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
|
|
219
In-stock
|
IXYS | MOSFET MOSFET 650V/80A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 80 A | 40 mOhms | 2.7 V | 143 nC | Enhancement | ||||
|
|
232
In-stock
|
IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | Enhancement | HyperFET | |||||
|
|
973
In-stock
|
IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
|
|
263
In-stock
|
IXYS | MOSFET 650V/145A Ultra Junction X2-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 145 A | 17 mOhms | 2.7 V | 355 nC | Enhancement | HiPerFET | ||||
|
|
300
In-stock
|
IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
113
In-stock
|
IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
|
|
484
In-stock
|
IXYS | MOSFET 500V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | Enhancement | HyperFET | |||||
|
|
432
In-stock
|
IXYS | MOSFET MOSFET 650V/120A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 120 A | 24 mOhms | 2.7 V | 225 nC | Enhancement | ||||
|
|
113
In-stock
|
IXYS | MOSFET 60 Amps 800V 0.14 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 60 A | 140 mOhms | 5 V | 250 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
150
In-stock
|
IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 30 A | 350 mOhms | 6.5 V | 310 nC | Enhancement | Polar, HiPerFET | |||
|
|
1,616
In-stock
|
IXYS | MOSFET 600V 18A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 400 mOhms | Enhancement | HyperFET | |||||
|
|
97
In-stock
|
IXYS | MOSFET 600V 64A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 96 mOhms | Enhancement | HyperFET | |||||
|
|
406
In-stock
|
IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | |||||
|
|
850
In-stock
|
IXYS | MOSFET 500V 36A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | Enhancement | HyperFET | |||||
|
|
397
In-stock
|
IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
|
|
816
In-stock
|
IXYS | MOSFET 12 Amps 1200V 1.15 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 12 A | 1.35 Ohms | 6.5 V | 103 nC | Enhancement | Polar, HiPerFET | |||
|
|
422
In-stock
|
IXYS | MOSFET >1200V High Voltage Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | |||||
|
|
52
In-stock
|
IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | ||||
|
|
42
In-stock
|
IXYS | MOSFET 32 Amps 1200V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 32 A | 310 mOhms | 6.5 V | 360 nC | Enhancement | Polar, HiPerFET | |||
|
|
77
In-stock
|
IXYS | MOSFET 60 Amps 500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 53 A | 100 mOhms | 4.5 V | 610 nC | Enhancement | Linear L2 | ||||
|
|
870
In-stock
|
IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | 5 V | 71 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
100
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A | 30 V | Through Hole | TO-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 32 A | 320 mOhms | 195 nC | HyperFET | ||||||
|
|
180
In-stock
|
IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | |||||
|
|
110
In-stock
|
IXYS | MOSFET 62 Amps 500V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 62 A | 100 mOhms | 5.5 V | 550 nC | Enhancement | Linear | |||
|
|
276
In-stock
|
IXYS | MOSFET 500V 132A 0.039Ohm PolarP3 Power MOSFET | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 132 A | 39 mOhms | 5 V | 250 nC | HyperFET |
