- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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870
In-stock
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IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | 5 V | 71 nC | Enhancement | PolarHV, HiPerFET | ||||
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507
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | ||||||
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150
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | Enhancement | HyperFET | ||||||
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90
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | 6.5 V | 120 nC | Enhancement | Polar, HiPerFET | ||||
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192
In-stock
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IXYS | MOSFET 500V 16A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | ||||||
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100
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | 5.5 V | 43 nC | Enhancement | PolarHV | ||||
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267
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | ||||||
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149
In-stock
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IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | |||||||
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82
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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37
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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30
In-stock
|
IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 330 mOhms | Polar2 HiPerFET | |||||||
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VIEW | IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement |