- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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IXYS | MOSFET 38 Amps 1000V 0.21 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 29 A | 230 mOhms | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 240 mOhms | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 18 A | 380 mOhms | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 92 mOhms | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 32 Amps 1200V | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 24 A | 340 mOhms | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET Q2-Class HiperFET 1000, 22A | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 280 mOhms | Enhancement | HyperFET |
