- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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255
In-stock
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IXYS | MOSFET -96 Amps -85V 0.013 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 85 V | - 96 A | 13 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||||
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58
In-stock
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IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
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60
In-stock
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IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
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85
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.9 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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48
In-stock
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IXYS | MOSFET 40V/270A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.4 mOhms | 2 V | 182 nC | Enhancement | TrenchT4 | |||
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177
In-stock
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IXYS | MOSFET TrenchP Channel Power MOSFETs | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | - 2 V to - 4 V | 400 nC | Enhancement | ||||
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90
In-stock
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IXYS | MOSFET -140 Amps -50V 0.008 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 50 V | - 140 A | 9 mOhms | - 4 V | 200 nC | Enhancement | TrenchP |
