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- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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32 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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305
In-stock
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IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 18 mOhms | 2.5 V | 260 nC | Enhancement | ||||
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590
In-stock
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IXYS | MOSFET LinearL2 Powr MOSFET w/extended FBSOA | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 21 mOhms | |||||||
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654
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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147
In-stock
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IXYS | MOSFET N-CH 100V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6 A | 64 mOhms | 22 nC | ||||||
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150
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
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105
In-stock
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IXYS | MOSFET 133 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 133 A | 9 mOhms | 5 V | 235 nC | Enhancement | Polar, HiPerFET | |||
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70
In-stock
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IXYS | MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 100 V | 64 A | 32 mOhms | 2.5 V | 100 nC | Enhancement | LinearL2 | ||||
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30
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A | Through Hole | TO-247-3 | Tube | Si | N-Channel | 100 V | 360 A | 2.9 mOhms | HiPerFET | ||||||||||
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14
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | Si | N-Channel | 100 V | 250 A | 6.5 mOhms | HyperFET | ||||||||||
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20
In-stock
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IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 133 Amps 100V 0.008 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 8 mOhms | 5 V | 235 nC | Enhancement | Polar | |||
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909
In-stock
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IXYS | MOSFET 110 Amps 100V 0.015 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 110 A | 15 mOhms | 5 V | 110 nC | Enhancement | PolarHT, HiPerFET | |||
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170
In-stock
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IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 320A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 320 A | 3.5 mOhms | 4 V | 430 nC | Enhancement | HiPerFET | |||
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30
In-stock
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IXYS | MOSFET 170 Amps 100V 0.009 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | 5 V | 198 nC | Enhancement | PolarHT, HiPerFET | |||
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5
In-stock
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IXYS | MOSFET 130 Amps 100V 8.5 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 130 A | 8.5 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.5 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 100V 180A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 8 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100V 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 80 Amps 100V 0.125 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 12.5 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 160 Amps 100V 6.9 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 160 A | 7 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 67 Amps 100V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 67 Amps 100V 0.025 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 67 A | 25 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET STD N-CHNL PWR MOSFE 100V, 75A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 100V 80A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 75 Amps 100V 0.02 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 75 A | 20 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 60 Amps 100 V 0.033 W Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 20 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 100V 165A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 165 A | 8 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 180 Amps 100V 6.1 Rds | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 180 A | 6.4 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET 80 Amps 100V 0.018 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 76 A | 15 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 230Amps 100V | Through Hole | TO-247-3 | Tube | Si | N-Channel | 100 V | 230 A | 4.7 mOhms |
