- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Channel Mode :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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150
In-stock
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IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 2.5 V | 12 nC | Enhancement | |||
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GET PRICE |
112
In-stock
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IXYS | MOSFET 0.1 Amps 1000V 80 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 100 mA | 80 Ohms | Enhancement | |||||
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GET PRICE |
161
In-stock
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IXYS | MOSFET 0.2 Amps 500V 30 Rds | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 200 mA | 30 Ohms | Depletion | |||||
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VIEW | IXYS | MOSFET 0.5 Amps 1000V | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms |