- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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76
In-stock
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IXYS | MOSFET 4500V 2A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 2 A | 23 Ohms | 3.5 V to 5.5 V | 156 nC | Enhancement | ||||
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14,500
In-stock
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IXYS | MOSFET 4500V 200mA HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 200 mA | 750 Ohms | 4 V to 6.5 V | 10.4 nC | Enhancement | ||||
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165
In-stock
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IXYS | MOSFET 4500V 0.9A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 4500 V | 900 mA | 95 Ohms | 3.5 V to 6 V | 40 nC | Enhancement | ||||
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29
In-stock
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IXYS | MOSFET 2500V 1A HV Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1 A | 40 Ohms | 2 V to 4 V | 41 nC | Enhancement | ||||
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25
In-stock
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IXYS | MOSFET 200 Amps 100V 5.4 Rds | Through Hole | ISOPLUS-i4-PAK-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 6.3 mOhms | Enhancement | |||||||
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25
In-stock
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IXYS | MOSFET 40 Amps 600V | 20 V | Through Hole | ISOPLUS-i4-PAK-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 41 A | 70 mOhms | 3.9 V | 250 nC | Enhancement | CoolMOS, ISOPLUS i4-PAC |
