- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 100 A (3)
- 102 A (2)
- 110 A (6)
- 115 A (1)
- 12 A (1)
- 120 A (16)
- 130 A (6)
- 133 A (1)
- 140 A (6)
- 150 A (6)
- 16 A (1)
- 160 A (6)
- 170 A (10)
- 180 A (7)
- 1800 A (1)
- 188 A (1)
- 20 A (1)
- 200 A (10)
- 210 A (1)
- 220 A (8)
- 230 A (4)
- 235 A (1)
- 240 A (1)
- 260 A (3)
- 270 A (6)
- 29 A (1)
- 295 A (1)
- 300 A (1)
- 310 A (1)
- 32 A (2)
- 320 A (2)
- 340 A (6)
- 360 A (1)
- 400 A (1)
- 420 A (3)
- 44 A (2)
- 440 A (1)
- 465 A (1)
- 48 A (3)
- 480 A (1)
- 50 A (3)
- 500 A (3)
- 520 A (2)
- 53 A (1)
- 550 A (2)
- 6 A (1)
- 60 A (3)
- 600 A (1)
- 62 A (3)
- 70 A (2)
- 74 A (3)
- 75 A (3)
- 76 A (3)
- 80 A (2)
- 86 A (3)
- 90 A (4)
- 96 A (8)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
- 1.25 mOhms (1)
- 1.3 mOhms (2)
- 1.5 mOhms (2)
- 1.6 mOhms (3)
- 1.7 mOhms (2)
- 1.9 mOhms (2)
- 10 mOhms (2)
- 10.5 mOhms (2)
- 11 mOhms (11)
- 12 mOhms (4)
- 13 mOhms (5)
- 14 mOhms (4)
- 15 mOhms (2)
- 16 mOhms (5)
- 18 mOhms (6)
- 2.2 mOhms (3)
- 2.3 mOhms (2)
- 2.4 mOhms (2)
- 2.5 mOhms (1)
- 2.6 mOhms (3)
- 2.8 mOhms (2)
- 2.9 mOhms (1)
- 20 mOhms (2)
- 21 mOhms (2)
- 22 mOhms (6)
- 23 mOhms (1)
- 24 mOhms (11)
- 25 mOhms (1)
- 29 mOhms (3)
- 3.1 mOhms (3)
- 3.2 mOhms (2)
- 3.3 mOhms (3)
- 3.5 mOhms (3)
- 30 mOhms (1)
- 32 mOhms (1)
- 33 mOhms (1)
- 34 mOhms (3)
- 4 mOhms (4)
- 4.2 mOhms (2)
- 4.4 mOhms (1)
- 40 mOhms (2)
- 5 mOhms (1)
- 5.2 mOhms (2)
- 5.4 mOhms (3)
- 5.5 mOhms (3)
- 50 mOhms (3)
- 6.1 mOhms (2)
- 6.3 mOhms (2)
- 6.4 mOhms (4)
- 6.6 mOhms (2)
- 60 mOhms (3)
- 64 mOhms (2)
- 66 mOhms (1)
- 7 mOhms (7)
- 7.4 mOhms (1)
- 7.5 mOhms (7)
- 7.7 mOhms (1)
- 78 mOhms (2)
- 8 mOhms (1)
- 8.4 mOhms (1)
- 8.5 mOhms (4)
- 85 mOhms (1)
- 850 mOhms (1)
- 9 mOhms (8)
- 9.1 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 107 nC (2)
- 109 nC (2)
- 110 nC (3)
- 112 nC (2)
- 130 nC (1)
- 136 nC (3)
- 140 nC (2)
- 145 nC (5)
- 150 nC (7)
- 152 nC (4)
- 155 nC (4)
- 162 nC (1)
- 178 nC (1)
- 182 nC (3)
- 185 nC (4)
- 190 nC (3)
- 198 nC (2)
- 200 nC (3)
- 22 nC (1)
- 225 nC (1)
- 235 nC (3)
- 240 nC (6)
- 253 nC (1)
- 256 nC (4)
- 265 nC (1)
- 279 nC (1)
- 300 nC (2)
- 33 nC (1)
- 378 nC (1)
- 38 nC (1)
- 405 nC (2)
- 42 nC (1)
- 420 nC (1)
- 430 nC (2)
- 460 nC (1)
- 480 nC (1)
- 500 nC (1)
- 525 nC (1)
- 545 nC (5)
- 58 nC (1)
- 590 nC (1)
- 595 nC (2)
- 60 nC (2)
- 63 nC (1)
- 640 nC (1)
- 670 nC (3)
- 70 nC (3)
- 715 nC (1)
- 74 nC (2)
- 78 nC (1)
- 79 nC (1)
- 860 nC (1)
- 90 nC (2)
- 97 nC (1)
- Channel Mode :
- Tradename :
-
- GigaMOS (2)
- GigaMOS, HiperFET (3)
- HiPerFET (16)
- HyperFET (13)
- Polar (1)
- Polar, HiPerFET (7)
- PolarHT (21)
- PolarHT, HiPerFET (11)
- PolarHT, ISOPLUS247, HiPerFET (1)
- PolarHV, HiPerFET (2)
- PolarHV, ISOPLUS247, HiPerFET (1)
- Trench (2)
- TrenchMV (2)
- TrenchT2 (12)
- TrenchT2, GigaMOS (2)
- TrenchT2, GigaMOS, HiperFET (5)
- TrenchT2, HiperFET (6)
- TrenchT4 (9)
183 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
81
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
90
In-stock
|
IXYS | MOSFET 60V/270A TrenchT3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
|
|
87
In-stock
|
IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
|
|
555
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
|
|
320
In-stock
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.3 mOhms | 5 V | 670 nC | Enhancement | HiPerFET | |||||
|
|
VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | ||||
|
|
168
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 310 A | 4 mOhms | HiPerFET | |||||||
|
|
137
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | |||||||
|
|
234
In-stock
|
IXYS | MOSFET 180 Amps 150V 0.011 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 150 A | 11 mOhms | Enhancement | HyperFET | |||||
|
|
671
In-stock
|
IXYS | MOSFET 170 Amps 100V 0.009 Ohm Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 170 A | 9 mOhms | Enhancement | ||||||
|
|
95
In-stock
|
IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | |||
|
|
502
In-stock
|
IXYS | MOSFET 230A 200V | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | Enhancement | ||||||
|
|
98
In-stock
|
IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | |||
|
|
229
In-stock
|
IXYS | MOSFET 188 Amps 200V 0.0105 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 188 A | 10.5 mOhms | HyperFET | ||||||
|
|
654
In-stock
|
IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
92
In-stock
|
IXYS | MOSFET 100V 200A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 5.4 mOhms | |||||||
|
|
154
In-stock
|
IXYS | MOSFET 550Amps 55V | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 175 C | Tube | Si | N-Channel | 55 V | 550 A | 1 MOhms | 4 V | 595 nC | Enhancement | TrenchT2, GigaMOS | ||||
|
|
68
In-stock
|
IXYS | MOSFET 200 Amps 100V 0.0075 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 7.5 mOhms | Enhancement | HyperFET | |||||
|
|
147
In-stock
|
IXYS | MOSFET N-CH 100V 16A MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 6 A | 64 mOhms | 22 nC | ||||||
|
|
135
In-stock
|
IXYS | MOSFET D2 Depletion Mode Power MOSFETs | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 64 mOhms | 225 nC | Depletion | |||||
|
|
100
In-stock
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
|
|
679
In-stock
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | |||
|
|
450
In-stock
|
IXYS | MOSFET 50 Amps 200V 0.06 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 50 A | 60 mOhms | 5 V | 70 nC | Enhancement | PolarHT | |||
|
|
150
In-stock
|
IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 100 V | 420 A | 2.6 mOhms | 5 V | 670 nC | Enhancement | GigaMOS, HiperFET | ||||
|
|
211
In-stock
|
IXYS | MOSFET 175V 150A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 175 V | 150 A | 12 mOhms | 2.5 V to 4.5 V | 63 nC | Enhancement | ||||
|
|
304
In-stock
|
IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | |||
|
|
159
In-stock
|
IXYS | MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 340 A | 3.2 mOhms | 4 V | 300 nC | Enhancement | HiPerFET | |||
|
|
226
In-stock
|
IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
621
In-stock
|
IXYS | MOSFET 170 Amps 75V | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 170 A | 5.4 mOhms | 4 V | 109 nC | Enhancement | TrenchT2 | |||
|
|
188
In-stock
|
IXYS | MOSFET TRENCHT2 PWR MOSFET 75V 520A | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 75 V | 520 A | 2.2 mOhms | 5 V | 545 nC | Enhancement | TrenchT2, GigaMOS, HiperFET |