- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
18
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1 kV | 32 A | 340 mOhms | 3 V | 260 nC | Enhancement | ||||
|
|
7
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 1000 V | 21 A | 380 mOhms | 3 V | 260 nC | Enhancement |
