- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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25,096
In-stock
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Nexperia | MOSFET 30V 350 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | 0.9 V | 0.52 nC | ||||
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8,650
In-stock
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Nexperia | MOSFET 30V 400 MA N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 1.4 Ohms | ||||||
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5,961
In-stock
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Nexperia | MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 350 mA | 1.4 Ohms | Enhancement | |||||
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4,531
In-stock
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Nexperia | MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 350 mA, - 200 mA | 1.4 Ohms | - 0.9 V, 0.9 V | 0.52 nC | Enhancement | ||||
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6,710
In-stock
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Nexperia | MOSFET N-Chan 30V 530mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 530 mA | 1.4 Ohms |
