- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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30,420
In-stock
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onsemi | MOSFET NFET DPAK 100V 19A 96MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 81 mOhms | 2 V to 4 V | 20 nC | ||||
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2,131
In-stock
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onsemi | MOSFET 16-128MHZ3.3VGPEMI | 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 17 A | 60 mOhms | ||||||
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3,300
In-stock
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onsemi | MOSFET NFET DPAK 60V 17A 64MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 66 mOhms | 2.5 V | 14 nC | ||||
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2,500
In-stock
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onsemi | MOSFET T6 60V LL DPAK | +/- 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 22.8 mOhms | 1.2 V | 7 nC | Enhancement |
