- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,578
In-stock
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onsemi | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.3 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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1,384
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 107 A | 4.8 mOhms | 1.2 V | 35 nC | Enhancement | ||||
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1,450
In-stock
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onsemi | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 9.1 mOhms | 1.2 V | 20 nC | Enhancement | ||||
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775
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 30A 10.5mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 8.1 mOhms | 1.5 V | 12 nC | Enhancement | ||||
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1,193
In-stock
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onsemi | MOSFET NFET U8FL 30V 47A 7.4MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 5.9 mOhms | 1.3 V | 19.3 nC | Enhancement | ||||
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1,425
In-stock
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onsemi | MOSFET T6 40V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 85 A | 6 mOhms | 1.2 V | 18 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 22 mOhms | 1.2 V | 6 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | ||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 40V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 51 A | 6.1 mOhms | 1.2 V | 16 nC | Enhancement | ||||
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2,380
In-stock
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onsemi | MOSFET NFET U8FL 30V 22A 17MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22.1 A | 13 mOhms | 1.3 V | 10.3 nC | Enhancement |