- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | |||
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2,375
In-stock
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STMicroelectronics | MOSFET N-CH 525 V 4.4 A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.2 Ohms | 17 nC | |||||
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582
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 3 V | 17 nC | Enhancement | |||
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310
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 2 Ohms | 4 V | 17 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 2.5 Ohms | 3.75 V | 17 nC |
