- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,669
In-stock
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STMicroelectronics | MOSFET P-Ch 30 Volt 24 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 24 A | 32 mOhms | Enhancement | ||||||
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23,550
In-stock
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STMicroelectronics | MOSFET P-Ch 55 Volt 80 Amp | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 80 A | 18 mOhms | Enhancement | ||||||
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2,691
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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5,905
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 130 mOhms | - 4 V | 6.4 nC | Enhancement | ||||
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2,026
In-stock
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STMicroelectronics | MOSFET P-CH 30V 0.024Ohm 12A STripFET VI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 30 mOhms | 2.5 V | 26 nC | |||||
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GET PRICE |
24,330
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 46 A | 12.5 mOhms | - 2.5 V | 34 nC | Enhancement | ||||
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383
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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590
In-stock
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STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC | |||||
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1,262
In-stock
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STMicroelectronics | MOSFET P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a D... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 36 A | 17.5 mOhms | - 2.5 V | 22 nC | Enhancement | |||||
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117
In-stock
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STMicroelectronics | MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power ... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 10 A | 180 mOhms | 2 V | 16.5 nC | Enhancement | |||||
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115
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 35 A | 25 mOhms | - 2.5 V | 30 nC | Enhancement | ||||
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29
In-stock
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STMicroelectronics | MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -40 A STripF... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 49 A | 15 mOhms | - 4 V | 30.6 nC | Enhancement | STripFET | |||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 33 mOhms | - 2 V | 12.8 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 12 mOhms | - 2.5 V | 24 nC | Enhancement |
