- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
15,260
In-stock
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STMicroelectronics | MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 110 A | 5.6 mOhms | 2.5 V | 150 nC | Enhancement | ||||
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1,571
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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713
In-stock
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STMicroelectronics | MOSFET | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 46 A | 5.6 mOhms | 2 V | 30 nC | Enhancement | ||||
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311
In-stock
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STMicroelectronics | MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.6 mOhms | 2 V | 30 nC | Enhancement |