- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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926
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 40 Amp | 17 V | Through Hole | TO-220-3 | - 65 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 40 A | 33 mOhms | Enhancement | ||||||
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1,879
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 25 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 33 mOhms | Enhancement | ||||||
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3,864
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 33 mOhms | - 2 V | 12.8 nC | Enhancement |