- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
1,508
In-stock
|
Texas instruments | MOSFET P-CH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 12.2 mOhms | - 800 mV | 6.5 nC | Enhancement | NexFET | ||
|
|
GET PRICE |
2,766
In-stock
|
Texas instruments | MOSFET 8-V P-Chan NexFET? Pwr MOSFET 9-DSBGA | - 6 V | SMD/SMT | DSBGA-9 | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 14 mOhms | ||||||||
|
|
GET PRICE |
1,320
In-stock
|
Texas instruments | MOSFET 8-V P-Channel NexFET Power MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 5 A | 14 mOhms | - 450 mV | 18.9 nC | Enhancement | NexFET |
