- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,985
In-stock
|
Toshiba | MOSFET Small-signal FET 0.491Ohm -1.4A -30V | +/- 20 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 191 mOhms | - 2.6 V | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET Vds=-30V Id=-1.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 360 mOhms | Enhancement |
