- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,998
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -2A, VDSS -30V | - 25 V to + 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 125 mOhms | - 2.2 V | 3.4 nC | Enhancement | |||
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5,134
In-stock
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Toshiba | MOSFET P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 20 V | SMD/SMT | SOT-346-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 2.4 Ohms | - 1.5 V | |||||
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11,481
In-stock
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Toshiba | MOSFET P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 136 mOhms | - 2 V | 5.9 nC | ||||
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2,121
In-stock
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Toshiba | MOSFET Vds=-30V Id=-2A 3Pin | +/- 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2 A | 225 mOhms | - 1.2 V | Enhancement | ||||
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GET PRICE |
10,810
In-stock
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Toshiba | MOSFET P-CH FET -30V 3.7 mOhm 45W | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 34 A | 3.7 mOhms | 115 nC | Enhancement | ||||
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2,557
In-stock
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Toshiba | MOSFET Small Signal MOSFET | +/- 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9 A | 26 mOhms | 1.3 V | 4.8 nC | Enhancement | ||||
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3,985
In-stock
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Toshiba | MOSFET Small-signal FET 0.491Ohm -1.4A -30V | +/- 20 V | SMD/SMT | ES6-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 191 mOhms | - 2.6 V | Enhancement | |||||
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1,096
In-stock
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Toshiba | MOSFET Vds=-30V Id=-1.1A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.1 A | 610 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET Vds=-30V Id=-1.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.4 A | 360 mOhms | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 30V 6A | 20 V | SMD/SMT | VS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 28 mOhms | Enhancement |