- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
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10,647
In-stock
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Toshiba | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | 10 V | SMD/SMT | ES6-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | |||||||
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VIEW | Toshiba | MOSFET SMOS | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 2.5 V | Enhancement | |||
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VIEW | Toshiba | MOSFET 60V VDSS 20V VGSS 200mA ID 150mW | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 3.3 Ohms | 3.1 V | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 200 mA | 2.1 Ohms | 3.1 V |
