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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK5A55D(STA4,Q,M)
1+
$1.390
10+
$1.120
100+
$0.860
500+
$0.760
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 5A 550V 35W 540pF 1.7 Ohm   Through Hole TO-220FP-3       1 Channel Si N-Channel 550 V 5 A 1.7 Ohms      
TK4A60D(STA4,Q,M)
1+
$1.430
10+
$1.150
100+
$0.884
500+
$0.781
RFQ
220
In-stock
Toshiba MOSFET N-Ch FET 600V 2.5s IDSS 10 uA   SMD/SMT TO-220FP-3       1 Channel Si N-Channel 600 V 4 A 1.7 Ohms      
TK4A60DA(STA4,Q,M)
1+
$1.320
10+
$1.060
100+
$0.817
500+
$0.722
RFQ
67
In-stock
Toshiba MOSFET N-ch 600V 3.5A TO-220SIS 30 V SMD/SMT TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 3.5 A 1.7 Ohms 2.4 V to 4.4 V 11 nC Enhancement
TK4A53D(STA4,Q,M)
50+
$1.010
100+
$0.778
500+
$0.688
1000+
$0.543
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm   Through Hole TO-220FP-3       1 Channel Si N-Channel 525 V 4 A 1.7 Ohms      
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