- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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14,200
In-stock
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Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | ||||
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312
In-stock
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Toshiba | MOSFET 60V N-Ch PWR FET 105A 110W 46nC | 10 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 60 V | 105 A | 5.4 mOhms | 46 nC | |||||||||
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295
In-stock
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Toshiba | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 60 V | 58 A | 4.4 mOhms | 2 V to 4 V | 46 nC | Enhancement | |||||
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388
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | ||||
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46,800
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 10 A | 700 mOhms | 4 V | 46 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 1.4 mOhms | 1.3 V to 2.3 V | 46 nC | Enhancement |