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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK6A60D(STA4,Q,M)
1+
$1.650
10+
$1.330
100+
$1.020
500+
$0.903
RFQ
1,074
In-stock
Toshiba MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 6 A 1.25 Ohms 4 V 16 nC Enhancement
TK6A80E,S4X
1+
$1.890
10+
$1.520
100+
$1.220
500+
$1.060
RFQ
198
In-stock
Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS 30 V Through Hole TO-220FP-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 800 V 6 A 1.35 Ohms 4 V 32 nC Enhancement
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