- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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323
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Toshiba | MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 300 mOhms | 2.7 V to 3.7 V | 25 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 15A | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 300 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 15A | 30 V | SMD/SMT | TFP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15 A | 300 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET N-CH 500V, 15A | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | Tray | 1 Channel | Si | N-Channel | 500 V | 15 A | 300 mOhms | Enhancement |