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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK12E60W,S1VX
1+
$3.080
10+
$2.470
100+
$2.250
250+
$2.030
RFQ
323
In-stock
Toshiba MOSFET N-Ch 11.5A 110W FET 600V 890pF 25nC 30 V Through Hole TO-220-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 11.5 A 300 mOhms 2.7 V to 3.7 V 25 nC Enhancement
TK15J60U(F)
VIEW
RFQ
Toshiba MOSFET MOSFET DTMOS-II N-Ch 600V 15A 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 15 A 300 mOhms     Enhancement
TK15X60U(TE24L,Q)
VIEW
RFQ
Toshiba MOSFET MOSFET DTMOS-II N-Ch 600V 15A 30 V SMD/SMT TFP-4 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 15 A 300 mOhms     Enhancement
TK15A50D(Q,M)
VIEW
RFQ
Toshiba MOSFET MOSFET N-CH 500V, 15A 30 V SMD/SMT TO-220FP-3 - 55 C + 150 C Tray 1 Channel Si N-Channel 500 V 15 A 300 mOhms     Enhancement
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